Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation

• 作者: 任迪远 余学峰 余德昭 周航 崔江维 郑齐文 郭旗 陆妩
• 来源期刊: 中国物理B（英文版）
• 关键词: total dose irradiation static random access memory functional failure mode
• 年，卷（期）: 2015,（10）
• 页码范围: 106106-1-106106-6
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/10/106106

摘要

Functional failure mode of commercial deep sub-micron static random access memory (SRAM) induced by total dose irradiation is experimentally analyzed and verified by circuit simulation. We extensively characterize the functional failure mode of the device by testing its electrical parameters and function with test patterns covering different functional failure modes. Experimental results reveal that the functional failure mode of the device is a temporary function interruption caused by peripheral circuits being sensitive to the standby current rising. By including radiation-induced threshold shift and off-state leakage current in memory cell transistors, we simulate the influence of radiation on the functionality of the memory cell. Simulation results reveal that the memory cell is tolerant to irradiation due to its high stability, which agrees with our experimental result.