Electronic properties of the SnSe-metal contacts:First-principles study

• 作者: 戴宪起 李伟 王天兴 王小龙
• 来源期刊: 中国物理B（英文版）
• 关键词: first-principles monolayer SnSe metal-semiconductor contact current-in-plane structure
• 年，卷（期）: 2015,（11）
• 页码范围: 117308-1-117308-5
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/11/117308

摘要

The geometries and electronic properties of SnSe/metal contact have been investigated using first-principles calcula-tion. It is found that the geometries of monolayer SnSe were affected slightly when SnSe adsorbs on M (M=Ag, Au, Ta) substrate. Compared with the corresponding free-standing monolayer SnSe, the adsorbed SnSe undergoes a semiconductor-to-metal transition. The potential difference?V indicates that SnSe/Ta contact is the best candidate for the Schottky contact of the three SnSe/M contacts. Two types of current-in-plane (CIP) structure, where a freestanding monolayer SnSe is con-nected to SnSe/M, are identified as the n-type CIP structure in SnSe/Ag contact and p-type CIP structure in SnSe/Au and SnSe/Ta contact. The results can stimulate further investigation for the multifunctional SnSe/metal contact.