Tunneling magnetoresistance based on a Cr/graphene/Cr magnetotunnel junction

• 作者: 孙立忠 张沛然 栾桂苹 焦娜
• 来源期刊: 中国物理B（英文版）
• 关键词: graphene first-principles method magnetotunnel junction tunneling magnetoresistance
• 年，卷（期）: 2015,（11）
• 页码范围: 117201-1-117201-6
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/11/117201

摘要

Using the density functional theory and the nonequilibrium Green’s function method, we studied the finite-bias quan-tum transport in a Cr/graphene/Cr magnetotunnel junction (MTJ) constructed by a single graphene layer sandwiched be-tween two semi-infinite Cr(111) electrodes. We found that the tunneling magnetoresistance (TMR) ratio in this MTJ reached 108%, which is close to that of a perfect spin filter. Under an external positive bias, we found that the TMR ratio remained constant at 65%, in contrast to MgO-based MTJs, the TMR ratios of which decrease with increasing bias. These results indicate that the Cr/graphene/Cr MTJ is a promising candidate for spintronics applications.