Carrier behavior of HgTe under high pressure revealed by Hall effect measurement

• 作者: 吕秀梅 崔晓岩 李雪飞 杨景海 王婧姝 王棱升 胡廷静 高春晓
• 来源期刊: 中国物理B（英文版）
• 关键词: electrical properties phase transitions transport properties scattering mechanism
• 年，卷（期）: 2015,（11）
• 页码范围: 116401-1-116401-4
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/11/116401

摘要

We investigate the carrier behavior of HgTe under high pressures up to 23 GPa using in situ Hall effect measurements. As the phase transitions from zinc blende to cinnabar, then to rock salt, and finally to Cmcm occur, all the parameters change discontinuously. The conductivity variation under compression is described by the carrier parameters. For the zinc blende phase, both the decrease of carrier concentration and the increase of mobility indicate the overlapped valence band and conduction band separates with pressure. Pressure causes an increase in the hole concentration of HgTe in the cinnabar phase, which leads to the carrier-type inversion and the lowest mobility at 5.6 GPa. In the phase transition process from zinc blende to rock salt, Te atoms are the major ones in atomic movements in the pressure regions of 1.0–1.5 GPa and 1.8–3.1 GPa, whereas Hg atoms are the major ones in the pressure regions of 1.5–1.8 GPa and 3.1–7.7 GPa. The polar optical scattering of the rock salt phase decreases with pressure.