Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment

• 作者: 宓珉瀚 张凯 张进成 王冲 赵胜雷 郝跃 马晓华
• 来源期刊: 中国物理B（英文版）
• 关键词: GaN-based HEMTs N2O plasma pre-pretreatment frequency-dependent conductance
• 年，卷（期）: 2015,（2）
• 页码范围: 027303-1-027303-5
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/2/027303

摘要

The influence of N2O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility tran-sistor (HEMT) prepared by using a plasma-enhanced chemical vapor deposition (PECVD) system is presented. After the plasma treatment, the peak transconductance (gm) increases from 209 mS/mm to 293 mS/mm. Moreover, it is observed that reverse gate leakage current is lowered by one order of magnitude and the drain current dispersion is improved in plasma-treated device. From the analysis of frequency-dependent conductance, it can be seen that the trap state density (DT) and time constant (τT) of N2O-treated device are smaller than those of non-treated device. The results indicate that the N2O plasma pre-pretreatment before the gate metal deposition could be a promising approach to enhancing the performance of the device.