Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

• 作者: 刘星元 吴绍航 张楠 胡永生 蒋大鹏 陈红
• 来源期刊: 中国物理B（英文版）
• 关键词: thin-film transistor ZnO electron beam evaporation
• 年，卷（期）: 2015,（10）
• 页码范围: 108504-1-108504-5
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/10/108504

摘要

Strontium-zinc-oxide (SrZnO) films forming the semiconductor layers of thin-film transistors (TFTs) are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide (ZnO) with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel.