Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

• 作者: 张万荣 张良浩 江之韵 胡瑞心 谢红云 霍文娟
• 来源期刊: 中国物理B（英文版）
• 关键词: uni-traveling-carrier double hetero-junction phototransistor optical responsivity optical transi-tion frequency
• 年，卷（期）: 2015,（4）
• 页码范围: 048504-1-048504-5
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/4/048504

摘要

In this paper, the positive influence of a uni-traveling-carrier (UTC) structure to ease the contract between the respon-sivity and working speed of the InP-based double hetero-junction phototransistor (DHPT) is illustrated in detail. Different results under electrical bias, optical bias or combined electrical and optical bias are analyzed for an excellent UTC-DHPT performance. The results show that when the UTC-DHPT operates at three-terminal (3T) working mode with combined electrical bias and optical bias in base, it keeps a high optical responsivity of 34.72 A/W and the highest optical transition frequency of 120 GHz. The current gain of the 3T UTC-DHPT under 1.55-μm light illuminations reaches 62 dB. This indicates that the combined base electrical bias and optical bias of 3T UTC-DHPT can make sure that the UTC-DHPT provides high optical current gain and high optical transition frequency simultaneously.