A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high- dielectric

• 来源期刊: 中国物理B（英文版）
• 关键词: recessed-source/drain (Re-S/D) high-k gate-material fringing field and SCEs
• 年，卷（期）: 2015,（10）
• 页码范围: 108505-1-108505-8
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/10/108505

摘要

In this paper, a surface potential based threshold voltage model of fully-depleted (FD) recessed-source/drain (Re-S/D) silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is presented while considering the effects of high-k gate-dielectric material induced fringing-field. The two-dimensional (2D) Poisson’s equation is solved in a channel region in order to obtain the surface potential under the assumption of the parabolic potential profile in the trans-verse direction of the channel with appropriate boundary conditions. The accuracy of the model is verified by comparing the model’s results with the 2D simulation results from ATLAS over a wide range of channel lengths and other parameters, including the dielectric constant of gate-dielectric material.