Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

• 作者: 俞文杰 史达特 张建明 李成 狄增峰 王曦 裴嘉鼎 陈龙
• 来源期刊: 中国物理B（英文版）
• 关键词: metalorganic chemical vapor deposition semipolar light emitting diodes
• 年，卷（期）: 2015,（11）
• 页码范围: 118102-1-118102-4
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/11/118102

摘要

Semi-polar (1?101) InGaN/GaN light-emitting diodes were prepared on standard electronic-grade Si (100) substrates. Micro-stripes of GaN and InGaN/GaN quantum wells on semi-polar facets were grown on intersecting{111}planes of microscale V-grooved Si in metal–organic vapor phase epitaxy, covering over 50%of the wafer surface area. In-situ optical reflectivity and curvature measurements demonstrate that the effect of the thermal expansion coefficient mismatch was greatly reduced. A cross-sectional analysis reveals low threading dislocation density on the top of most surfaces. On such prepared (1?101) GaN, an InGaN/GaN LED was fabricated. Electroluminescence over 5 mA to 60 mA is found with a much lower blue-shift than that on the c-plane device. Such structures therefore could allow higher efficiency light emitters with a weak quantum confined Stark effect throughout the visible spectrum.