Nano LaAlO3 buffer layer-assisted tunneling current in manganite p-n heterojunction

• 作者: 李云宝 汪汝武 王登京 马俊杰 黄海林
• 来源期刊: 中国物理B（英文版）
• 关键词: manganite heterojunction tunneling
• 年，卷（期）: 2015,（10）
• 页码范围: 107102-1-107102-6
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/10/107102

摘要

An oxide p–n heterojunction composed of a 150-nm La0.67Ca0.33MnO3 (LCMO) film, 0.05 wt%Nb doped SrTiO3 substrate (STON), and sandwiched 5-nm LaAlO3 (LAO) thin film is fabricated with the pulsed laser deposition technique and the interfacial transport properties are experimentally studied. The rectifying behavior of the junction is in agreement with Newman’s equation, indicating that tunneling is the dominant process for the carriers to pass through the interface while thermal emission is the dominant transport model of an LCMO/STON heterojunction with no LAO buffer layer.