Frequency Response Optimization of Dual Depletion InGaAs/InP PIN Photodiodes

• 来源期刊: 光子传感器（英文版）
• 关键词: PIN photodiodes dual depletion frequency response modeling
• 年，卷（期）: 2016,（1）
• 页码范围: 63-70
• 页数: 8页
• 语种: 英文
• DOI: 10.1007/s13320-015-0296-2

摘要

The frequency response of a dual depletion p-i-n (PIN) photodiode structure is investigated.It is assumed that the light is incident on the N side and the drift region is located between the N contact and the absorption region.The numerical model takes into account the transit time and the capacitive effects and is applied to photodiodes with non-uniform illumination and linear electric field profile.With an adequate choice of the device's structural parameters,dual depletion photodiodes can have larger bandwidths than the conventional PIN devices.