Influence of nitrogen and magnesium doping on the properties of ZnO films

• 作者: 周华 周颖慧 奎热西 康俊勇 李东华 李亚平 王嘉鸥 王惠琼 詹华瀚 郑金成 钱海杰 陈晓航 黄政
• 来源期刊: 中国物理B（英文版）
• 关键词: ZnO nitrogen magnesium x-ray absorption spectra
• 年，卷（期）: 2016,（7）
• 页码范围: 076105-1-076105-5
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/25/7/076105

摘要

Undoped ZnO and doped ZnO films were deposited on the MgO(111) substrates using oxygen plasma-assisted molec-ular beam expitaxy. The orientations of the grown ZnO thin film were investigated by in situ refl ection high-energy electron diffraction and ex situ x-ray diffraction (XRD). The film roughness was measured by atomic force microscopy, which was correlated with the grain sizes determined by XRD. Synchrotron-based x-ray absorption spectroscopy was performed to study the doping effect on the electronic properties of the ZnO films, compared with density functional theory calculations. It is found that, nitrogen doping would hinder the growth of thin film, and generate the NO defect, while magnesium doping promotes the quality of nitrogen-doped ZnO films, inhibiting (N2)O production and increasing nitrogen content.