Preparation of few-layer graphene-capped boron nanowires and their field emission properties

• 作者: 刘飞 张永欣 李军 杨天中 申承民 许宁生 邓少芝 高鸿钧
• 来源期刊: 中国物理B（英文版）
• 关键词: boron nanowires graphene-capped boron nanowires field emission properties
• 年，卷（期）: 2016,（7）
• 页码范围: 078101-1-078101-4
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/25/7/078101

摘要

Large-area boron nanowire (BNW) films were fabricated on the Si(111) substrate by chemical vapor deposition (CVD). The average diameter of the BNWs is about 20 nm, with lengths of 5–10 μm. Then, graphene-capped boron nanowires (GC-BNWs) were obtained by microwave plasma chemical vapor deposition (MPCVD). Characterization by scanning electron microscopy indicates that few-layer graphene covers the surface of the boron nanowires. Field emission measurements of the BNWs and GC-BNW films show that the GC-BNW films have a lower turn-on electric field than the BNW films.