篇名 | Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor | ||
来源期刊 | 中国物理B(英文版) | 学科 | |
关键词 | thin film transistor (TFT) silicon-doped zinc oxide dual-active-layer structure bias-stress stability | ||
年,卷(期) | 2016,(8) | 所属期刊栏目 | |
研究方向 | 页码范围 | 452-457 | |
页数 | 6页 | 分类号 | |
字数 | 语种 | 中文 | |
DOI | 10.1088/1674-1056/25/8/088503 |