Direct Imaging of Cross-sectional Magnetization Reversal in the Exchange biased CoFeB/IrMn Bilayer

• 作者: Baomin Wang
• 来源期刊: 功能材料信息
• 学科: 工学
• 关键词: 英语 阅读 理解 磁性材料
• 年，卷（期）: gnclxx_2016,（6）
• 页码范围: 59-59
• 页数: 1页
• 分类号: TM27

摘要

<正>Magnetoelectronic devices have been widely used in magnetic storage and sensor.The pinned ferromagnetic layer with a unidirectional magnetic anisotropy is an important reference layer in the devices.Ferromagnetic material is pinned by antiferromagnetic material at the interface through exchange