Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs:A new candidate of host material of diluted magnetic semiconductors

• 作者: 冯少敏 刘清青 张思佳 望贤成 袁真 邓正 陈碧娟 靳常青
• 来源期刊: 中国物理B（英文版）
• 关键词: diluted magnetic semiconductor ZrCuSiAs-type structure high pressure
• 年，卷（期）: 2016,（7）
• 页码范围: 077503-1-077503-5
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/25/7/077503

摘要

The layered semiconductor BaFZnAs with the tetragonal ZrCuSiAs-type structure has been successfully synthesized. Both the in-situ high-pressure synchrotron x-ray diffraction and the high-pressure Raman scattering measurements demon-strate that the structure of BaFZnAs is stable under pressure up to 17.5 GPa at room temperature. The resistivity and the magnetic susceptibility data show that BaFZnAs is a non-magnetic semiconductor. BaFZnAs is recommended as a candidate of the host material of diluted magnetic semiconductor.