Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors

• 来源期刊: 中国物理B（英文版）
• 关键词: metal-oxide-semiconductor field-effect transistors 4H-SiC field-effect mobility oxidation process
• 年，卷（期）: 2016,（3）
• 页码范围: 362-365
• 页数: 4页
• 语种: 中文
• DOI: 10.1088/1674-1056/25/3/037306