Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

• 作者: 卜建辉 吴驰 李博 李彬鸿 毕津顺 罗家俊 解冰清 韩郑生
• 来源期刊: 中国物理B（英文版）
• 关键词: cryogenic temperature metal-oxide-semiconductor silicon-on-insulator capacitance
• 年，卷（期）: 2016,（7）
• 页码范围: 078501-1-078501-7
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/25/7/078501

摘要

The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator (SOI) metal-oxide-silicon (MOS) field-effect-transistors (FETs) were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.