Thermally induced native defect transform in annealed GaSb

• 作者: 刘京明 刘彤 杨俊 沈桂英 王芳芳 白永彪 苏杰 董志远 赵有文
• 来源期刊: 中国物理B（英文版）
• 关键词: GaSb annealing defect Hall effect measurement
• 年，卷（期）: 2016,（7）
• 页码范围: 077801-1-077801-5
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/25/7/077801

摘要

Undoped p-type GaSb single crystals were annealed at 550–600 ?C for 100 h in ambient antimony. The annealed GaSb samples were investigated by Hall effect measurement, glow discharge mass spectroscopy (GDMS), infrared (IR) optical transmission and photoluminescence (PL) spectroscopy. Compared with the as-grown GaSb single crystal, the annealed GaSb samples have lower hole concentrations and weak native acceptor related PL peaks, indicating the reduction of the concentration of gallium antisite related native acceptor defects. Consequently, the below gap infrared transmission of the GaSb samples is enhanced after the thermal treatment. The mechanism about the reduction of the native defect concentration and its infl uence on the material property were discussed.