Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

• 作者: 刘振 卓毅 庞洲骏 招瑜 王钢 范冰丰 陈义廷
• 来源期刊: 中国物理B（英文版）
• 关键词: light-emitting diodes III-V material transparent conductive layer anodic aluminum oxide
• 年，卷（期）: 2016,（7）
• 页码范围: 078502-1-078502-4
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/25/7/078502

摘要

We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19%at 20 mA and 56%at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage.