SRAM Cell Leakage Control Techniques for Ultra Low Power Application: A Survey

• 作者: Pavankumar Bikki Pitchai Karuppanan
• 来源期刊: 电路与系统(英文)
• 学科: 医学
• 关键词: Body BIASING Gate LEAKAGE JUNCTION LEAKAGE Power GATING MULTI-THRESHOLD SRAM Cell SUB-THRESHOLD LEAKAGE
• 年，卷（期）: dlyxtyw,（2）
• 页码范围: 23-52
• 页数: 30页
• 分类号: R73

摘要

Low power supply operation with leakage power reduction is the prime concern in modern nano-scale CMOS memory devices. In the present scenario, low leakage memory architecture becomes more challenging, as it has 30% of the total chip power consumption. Since, the SRAM cell is low in density and most of memory processing data remain stable during the data holding operation, the stored memory data are more affected by the leakage phenomena in the circuit while the device parameters are scaled down. In this survey, origins of leakage currents in a short-channel device and various leakage control techniques for ultra-low power SRAM design are discussed. A classification of these approaches made based on their key design and functions, such as biasing technique, power gating and multi-threshold techniques. Based on our survey, we summarize the merits and demerits and challenges of these techniques. This comprehensive study will be helpful to extend the further research for future implementations.