Designing a Carbon Nanotube Field-Effect Transistor with High Transition Frequency for Ultra-Wideband Application

• 作者: Ali Reza Kashani-Nia Ramin Nouri-Bayat
• 来源期刊: 工程(英文)(1947-3931)
• 学科: 化学
• 关键词: Carbon Nanotube FIELD-EFFECT TRANSISTOR (CNTFET) TRANSITION FREQUENCY ULTRA-WIDE Band (UWB) FETToy
• 年，卷（期）: gc-eng_2017,（1）
• 页码范围: 22-35
• 页数: 14页
• 分类号: O6

摘要

Theoretical calculations predict transition frequencies in the terahertz range for the field-effect transistors based on carbon nanotubes, and this shows their suitability for being used in high frequency applications. In this paper, we have designed a field-effect transistor based on carbon nanotube with high transition frequency suitable for ultra-wide band applications. We did this by optimizing nanotube diameter, gate insulator thickness and dielectric constant. As a result, we achieved the transition frequency about 7.45 THz. The environment of open source software FETToy is used to simulate the device. Also a suitable model for calculating the transition frequency is presented.