Self-assembled semiconductor quantum dots decorating the facets of GaAs nanowire for single-photon emission

• 来源期刊: 国家科学评论（英文版）
• 关键词: self-assembled nanowires quantum dots single photon emitters molecular beam epitaxy
• 年，卷（期）: 2017,（2）
• 页码范围: 196-209
• 页数: 14页
• 语种: 英文
• DOI: 10.1093/nsr/nwx042

摘要

In this chapter,we discuss the epitaxial growth of self-assembled quantum dots (QDs) in GaAs nanowires (NWs) and the characteristics of their single-photon emissions.We demonstrate Ga droplet-induced gold-free vapor-liquid-solid growth of hexagonal GaAs/AlGaAs core-shell NWs,branched GaAs NWs and tailored nanostructured morphologies on the NW facets.Particularly,we show two new types of QD-in-NW systems:one is a single InAs QD formed at the comer of a branched GaAs NW,and the other is a single GaAs QD formed on the NW facet.Sharp excitonic emission spectral lines are observed with vanishing two-photon emission probability.Furthermore,a single GaAs QD is achieved at the site of a single AlGaAs quantum ring (QR) on the NW facet.In addition,these NW-based single QDs are in-situ probed and integrated with single-mode optical fibers to achieve all-fiber-output single-photon sources for potential application in quantum integrated networks.