Graphene resistive random memory — the promising memory device in next generation

• 来源期刊: 中国物理B（英文版）
• 关键词: graphene-based resistive random access memory graphene oxide (GO)/reduced graphene oxide (rGO) resistive switching graphene
• 年，卷（期）: 2017,（3）
• 页码范围: 160-173
• 页数: 14页
• 语种: 英文
• DOI: 10.1088/1674-1056/26/3/038501

摘要

Graphene-based resistive random access memory (GRRAM) has grasped researchers' attention due to its merits compared with ordinary RRAM.In this paper,we briefly review different types of GRRAMs.These GRRAMs can be divided into two categories:graphene RRAM and graphene oxide (GO)/reduced graphene oxide (rGO) RRAM.Using graphene as the electrode,GRRAM can own many good characteristics,such as low power consumption,higher density,transparency,SET voltage modulation,high uniformity,and so on.Graphene flakes sandwiched between two dielectric layers can lower the SET voltage and achieve multilevel switching.Moreover,the GRRAM with rGO and GO as the dielectric or electrode can be simply fabricated.Flexible and high performance RRAM and GO film can be modified by adding other materials layer or making a composite with polymer,nanoparticle,and 2D materials to further improve the performance.Above all,GRRAM shows huge potential to become the next generation memory.