Poisoning of MoO3 Precursor on Monolayer MoS2 Nanosheets Growth by Tellurium-Assisted Chemical Vapor Deposition

• 来源期刊: 中国物理快报（英文版）
• 关键词: @@
• 年，卷（期）: 2017,（8）
• 页码范围: 137-140
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/34/8/088101

摘要

We obtain molybdenum disulfide (MoS2) nanosheets (NSs) with edge sizes of 18μm by direct sulfuration of MoO3 powder spread on the SiO2/Si substrates.However,the undesirable MoO3 nanoparticles (NPs) left on the surface of MoS2 NSs poison the MoO3 precursor.Introducing Te vapors to react with MoS2 to form low melting point intermediate MoSx Te2-x,the evaporations of MoO3 precursor recover and MoO3 NPs disappear.Thus Te vapor is effective to suppress poisoning of the MoO3 precursor.Selecting the appropriate amount of Te vapor,we fabricate monolayer MoS2 NSs up to 70 μm in edge length.This finding can be significant to understand the role of Te in the Te-assisted chemical vapor deposition growth process of layered chalcogenide materials.