Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

• 来源期刊: 中国物理B（英文版）
• 关键词: InAlN/GaN HEMT back barrier electron confinement short-channel effect (SCE)
• 年，卷（期）: 2017,（10）
• 页码范围: 433-437
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/26/10/107301

摘要

In this work,we use a 3-nm-thick A10.64In0.36N back-barrier layer in In0.17A10.83N/GaN high-electron mobility transistor (HEMT) to enhance electron confinement.Based on two-dimensional device simulations,the influences of A10.64In0.36N back-barrier on the direct-current (DC) and radio-frequency (RF) characteristics of InAIN/GaN HEMT are investigated,theoretically.It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick A10.64In0.36N back-barrier and no parasitic electron channel is formed.Comparing with the conventional InA1N/GaN HEMT,the electron confinement of the back-barrier HEMT is significantly improved,which allows a good immunity to short-channel effect (SCE) for gate length decreasing down to 60 nm (9-nm top barrier).For a 70-nm gate length,the peak current gain cut-off frequency (fT) and power gain cut-off frequency (fmax) of the back-barrier HEMT are 172 GHz and 217 GHz,respectively,which are higher than those of the conventional HEMT with the same gate length.