Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure

• 来源期刊: 中国物理B（英文版）
• 关键词: InGaN novel quantum wells light-emitting diodes electroluminescence
• 年，卷（期）: 2017,（8）
• 页码范围: 4-7
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/1674-1056/26/8/087311

摘要

The green light emitting diodes (LEDs) have lower quantum efficiency than LEDs with other emission wavelengths in the visible spectrum.In this research,a novel quantum well structure was designed to improve the electroluminescence (EL) of green InGaN-based LEDs.Compared with the conventional quantum well structure,the novel structure LED gained 2.14 times light out power (LOP) at 20-mA current injection,narrower FWHM and lower blue-shift at different current injection conditions.