Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil

• 来源期刊: 科学通报（英文版）
• 年，卷（期）: 2017,（15）
• 页码范围: 1074-1080
• 页数: 7页
• 语种: 英文

摘要

A foundation of the modem technology that uses single-crystal silicon has been the growth of highquality single-crystal Si ingots with diameters up to 12 inches or larger.For many applications of graphene,large-area high-quality (ideally of single-crystal) material will be enabling.Since the first growth on copper foil a decade ago,inch-sized single-crystal graphene has been achieved.We present here the growth,in 20 min,of a graphene film of (5 x 50) cm2 dimension with ＞99％ ultra-highly oriented grains.This growth was achieved by:(1) synthesis of metre-sized single-crystal Cu(1 1 1) foil as substrate;(2) epitaxial growth of graphene islands on the Cu(1 1 1) surface;(3) seamless merging of such graphene islands into a graphene film with high single crystallinity and (4) the ultrafast growth of graphene film.These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(1 1 1) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide.The as-synthesized graphene film,with very few misoriented grains (if any),has a mobility up to ～23,000 cm2 V-1 S-1 at 4 K and room temperature sheet resistance of ～230 Ω/□.It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity,and thus realize various industrial-level applications at a low cost.