Transparent conducting indium-tin-oxide (ITO) film as full front electrode in Ⅲ-V compound solar cell

• 来源期刊: 中国物理B（英文版）
• 关键词: full indium-tin-oxide (ITO) electrode specific contact resistance solar cell
• 年，卷（期）: 2017,（3）
• 页码范围: 495-499
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/26/3/037305

摘要

The application of transparent conducting indium-tin-oxide (ITO) film as full front electrode replacing the conventional bus-bar metal electrode in Ⅲ-V compound GalnP solar cell was proposed.A high-quality,non-rectifying contact between ITO and 10 nm N+-GaAs contact layer was formed,which is benefiting from a high carder concentration of the terrilium-doped N+-GaAs layer,up to 2× 1019 cm-3.A good device performance of the GaInP solar cell with the ITO electrode was observed.This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible Ⅲ-V solar cell.