Atomic crystals resistive switching memory

• 来源期刊: 中国物理B（英文版）
• 关键词: atomic crystals two-dimensional materials resistive switching memory
• 年，卷（期）: 2017,（3）
• 页码范围: 1-16
• 页数: 16页
• 语种: 英文
• DOI: 10.1088/1674-1056/26/3/033201

摘要

Facing the growing data storage and computing demands,a high accessing speed memory with low power and nonvolatile character is urgently needed.Resistive access random memory with 4F2 cell size,switching in sub-nanosecond,cycling endurances of over 1012 cycles,and information retention exceeding 10 years,is considered as promising nextgeneration non-volatile memory.However,the energy per bit is still too high to compete against static random access memory and dynamic random access memory.The sneak leakage path and metal film sheet resistance issues hinder the further scaling down.The variation of resistance between different devices and even various cycles in the same device,hold resistive access random memory back from commercialization.The emerging of atomic crystals,possessing fine interface without dangling bonds in low dimension,can provide atomic level solutions for the obsessional issues.Moreover,the unique properties of atomic crystals also enable new type resistive switching memories,which provide a brand-new direction for the resistive access random memory.