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摘要:
The influences of electrical and optical excitations on the conductivity characteristic are investigated in bulk and edge devices of ITO/TiO2/ITO structure.Driven by the electrical and optical stimuli independently,the conductivity relaxation behaviors of the pristine resistive state (PRS) are observed and ascribed to the electron trapping and the oxygen transport processes.For a resistive switching (RS) device,the conductance change under optical illumination is about two orders of magnitude smaller than the conductance change corresponding to the variation of background current due to the emergence of a great number of oxygen vacancies in the RS device.With the illumination being off,the conductance slowly decays,which suggests that the oxygen diffusion process dominates the conductance relaxation.The difference in conductance relaxation between the bulk and edge devices indicates that the oxygen exchange plays a critical role in the relaxation process of conductivity.The synergistic effects of both electrical and optical excitations on the RS devices could be used for novel applications in integrated optoelectronic memory devices.
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篇名 Synergistic effects of electrical and optical excitations on TiO2 resistive device
来源期刊 中国物理B(英文版) 学科
关键词 resistance switching photoconductance relaxation oxygen vacancy
年,卷(期) 2017,(8) 所属期刊栏目
研究方向 页码范围 462-467
页数 6页 分类号
字数 语种 英文
DOI 10.1088/1674-1056/26/8/087702
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resistance switching
photoconductance
relaxation
oxygen vacancy
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中国物理B(英文版)
月刊
1674-1056
11-5639/O4
北京市中关村中国科学院物理研究所内
eng
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17050
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0
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27962
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