Strong Influence of Temperature and Vacuum on the Photoluminescence of In0.3Ga0.7AS Buried and Surface Quantum Dots

• 来源期刊: 光子传感器（英文版）
• 关键词: Surface quantum dots photoluminescence temperature vacuum InGaAs
• 年，卷（期）: 2018,（3）
• 页码范围: 213-219
• 页数: 7页
• 语种: 英文
• DOI: 10.1007/s13320-018-0475-z

摘要

The strong influences of temperature and vacuum on the optical properties of In0.3Ga0.7As surface quantum dots (SQDs) are systematically investigated by photoluminescence (PL) measurements.For comparison,optical properties of buried quantum dots (BQDs) are also measured.The line-width,peak wavelength,and lifetime of SQDs are significantly different from the BQDs with the temperature and vacuum varied.The differences in PL response when temperature varies are attributed to carder transfer from the SQDs to the surface trap states.The obvious distinctions in PL response when vacuum varies are attributed to the SQDs intrinsic surface trap states inhibited by the water molecules.This research provides necessary information for device application of SQDs as surface-sensitivity sensors.