Anti-Reflection Characteristics of Si Nanowires for Enhanced Photoluminescence from CdTe/CdS Quantum Dots

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2018,（5）
• 页码范围: 91-94
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/35/5/056801

摘要

CdTe/CdS quantum dots (QDs) are fabricated on Si nanowires (NWs) substrates with and without Au nanoparticles (NPs).The formation of Au NPs on Si NWs can be certified as shown in scanning electron microscopy images.The optical properties of samples are also investigated.It is interesting to find that the photoluminescence (PL) intensity of CdTe/CdS QD films on Si nanowire substrates with Au NPs is significantly increased,which can reach 8-fold higher than that of samples on planar Si without Au NPs.The results of finite-difference time-domain simulation indicate that Au NPs induce stronger localization of electric field and then boost the PL intensity of QDs nearby.Furthermore,the time-resolved luminescence decay curve shows the PL lifetime,which is about 5.5ns at the emission peaks of QD films on planar,increasing from 1.8ns of QD films on Si NWs to 4.7ns after introducing Au NPs into Si NWs.