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The CuOx thin film photocathodes were deposited on F-doped Sn O2 (FTO)transparent conducting glasses by alternating current(AC)magnetron reactive sputtering under different Ar:O2 ratios.The advantage of this deposited method is that it can deposit a CuOx thin film uniformly and rapidly with large scale.From the photoelectrochemical(PEC)properties of these CuOx photocathodes,it can be found that the CuOx photocathode with Ar/O2 30:7 provide a photocurrent density ofà3.2 m A cmà2under a bias potentialà0.5 V(vs.Ag/Ag Cl),which was found to be twice higher than that of Ar/O2 with 30:5.A detailed characterization on the structure,morphology and electrochemical properties of these CuOx thin film photocathodes was carried out,and it is found that the improved PEC performance of CuOx semiconductor photocathode with Ar/O230:7 attributed to the less defects in it,indicating that this Ar/O230:7 is an optimized condition for excellent CuOx semiconductor photocathode fabrication.
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篇名 Fabrication of CuO_x thin-film photocathodes by magnetron reactive sputtering for photoelectrochemical water reduction
来源期刊 绿色能源与环境:英文版 学科 化学
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年,卷(期) 2018,(3) 所属期刊栏目
研究方向 页码范围 239-246
页数 8页 分类号 O646.541
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绿色能源与环境:英文版
季刊
2096-2797
10-1418/TK
北京
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253
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1
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