Simultaneous Effects of Impurity and Electric Field on Entropy Behavior in Double Cone-Like Quantum Dot

• 来源期刊: 理论物理通讯（英文版）
• 年，卷（期）: 2018,（1）
• 页码范围: 95-100
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/0253-6102/69/1/95

摘要

In this work,the simultaneous effects of electric field and impurity on the non-extensive entropy of a GaAs/Ga0.5In0.sAs double cone-like quantum dot that is grown on a GaAs wet layer are studied.The system is under an external electric field directed along the-x direction.First,we have solved the Schr(o)dinger equation using the finite element method.Then,we have used the Tsallis formalism and calculated the entropy of the system for different temperatures,electric fields and impurity locations.It is found that the entropy decreases with increasing the electric field and temperature.Since the electric field directed along the-x direction,the entropy reduces when the impurity moves toward the left hand side.