Demonstration of quantum anti-Zeno effect with a single trapped ion

• 来源期刊: 中国物理B（英文版）
• 关键词: quantum anti-Zeno effect single trapped ion quantum measurement
• 年，卷（期）: 2018,（9）
• 页码范围: 215-221
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/27/9/090305

摘要

We experimentally demonstrate the quantum anti-Zeno effect in a two-level system based on a single trapped ion 40Ca+.In the large detuning regime,we show that the transfer from the ground state to the excited state can be remarkably enhanced by the inserted projection measurements.The inserted measurements in our experiment are realized by the electron shelving technique.Compared to the ideal projection measurement,which makes the quantum state collapse instantaneously,a practical electron shelving process needs a finite time duration.The minimum time for this collapse process is shown to be inversely proportional to the square of the coupling strength between the measurement laser and the system.