Atomic scale electronic structure of the ferromagnetic semiconductor Cr2Ge2Te6

• 来源期刊: 科学通报（英文版）
• 年，卷（期）: 2018,（13）
• 页码范围: 825-830
• 页数: 6页
• 语种: 英文

摘要

Cr2Ge2Te6 is an intrinsic ferromagnetic semiconductor with van der Waals type layered structure,thus represents a promising material for novel electronic and spintronic devices.Here we combine scanning tunneling microscopy and first-principles calculations to investigate the electronic structure of Cr2Ge2Te6.Tunneling spectroscopy reveals a surprising large energy level shift and change of energy gap size across the ferromagnetic to paramagnetic phase transition,as well as a peculiar double-peak electronic state on the Cr-site defect.These features can be quantitatively explained by density functional theory calculations,which uncover a close relationship between the electronic structure and magnetic order.These findings shed important new lights on the microscopic electronic structure and origin of magnetic order in Cr2Ge2Te6.