Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si

• 来源期刊: 光：科学与应用（英文版）
• 年，卷（期）: 2018,（4）
• 页码范围: 26-31
• 页数: 6页
• 语种: 英文
• DOI: 10.1038/s41377-018-0008-y

摘要

Current laser-based display and lighting applications are invariably using blue laser diodes (LDs) grown on free-standing GaN substrates,which are costly and smaller in size compared with other substrate materials.1-3 Utilizing less expensive and large-diameter Si substrates for hetero-epitaxial growth of indium gallium nitride/gallium nitride (InGaN/GaN) multiple quantum well (MQW) structure can substantially reduce the cost of blue LDs and boost their applications.