Two Gaps in Semiconducting EuSbTe3 Studied by Angle-Resolved Photoemission Spectroscopy

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2018,（7）
• 页码范围: 81-84
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/35/7/077104

摘要

Using angle-resolved photoemission spectroscopy,we study the low-energy electronic structure of a layered ternary telluride EuSbTe3 semiconductor.It is found that the photoemission constant energy contours can be well described by the simple two-parameter (tperp and tpara) tight-binding model based on the Te orbitals in square-net planes of EuSbTe3,suggesting its Te 5p orbitals dominated low-lying electronic structure,which is reminiscent of other rare-earth tritellurides.However,a possible charge-density-wave gap of 80 me V is found to persist in 300 K,which renders the unexpected semiconducting properties in EuSbTe3.Moreover,we reveal an extra band gap occurring around 200 me V below the Fermi level at lov temperatures,which can be attributed to the interaction between the main and folded bands due to lattice scatterings.Our findings provide the first comprehensive understanding of the electronic structure of layered ternary tellurides,which lays the basis for future research on these compounds.