Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2018,（4）
• 页码范围: 74-77
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/35/4/046102

摘要

The bias dependence of radiation-induced narrow-width channel effects (RINCEs) in 65-nm n-type metal-oxidesemiconductor field-effect transistors (NMOSFETs) is investigated.The threshold voltage of the narrow-width 65 nm NMOSFET is negatively shifted by total ionizing dose irradiation,due to the RINCE.The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground,which is contrary to the conclusion obtained in the old generation devices.Depending on the three-dimensional simulation,we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.