Non-monotonic dependence of current upon i-width in silicon p-i-n diodes

• 来源期刊: 中国物理B（英文版）
• 关键词: semiconductor junction diodes transport properties
• 年，卷（期）: 2018,（6）
• 页码范围: 339-342
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/1674-1056/27/6/066106

摘要

Silicon p-i-n diodes with different i-region widths are fabricated and tested.It is found that the current shows the non-monotonic behavior as a function of i-region width at a bias voltage of 1.0 V.In this paper,an analytical model is presented to explain the non-monotonic behavior,which mainly takes into account the diffusion current and recombination current contributing to the total current.The calculation results indicate that the concentration ratio of p-region to n-regionplays a crucial role in the non-monotonic behavior,and the carrier lifetime also has a great influence on this abnormal phenomenon.