Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors

• 来源期刊: 中国物理B（英文版）
• 关键词: junctionless nanowire transistor quantum transport Hubbard band quantum dot
• 年，卷（期）: 2018,（8）
• 页码范围: 603-607
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/27/8/088106

摘要

We discuss the random dopant effects in long channel junctionless transistor associated with quantum confinement effects. The electrical measurement reveals the threshold voltage variability induced by the random dopant fluctuation. Quantum transport features in Hubbard systems are observed in heavily phosphorus-doped channel. We investigate the single electron transfer via donor-induced quantum dots in junctionless nanowire transistors with heavily phosphorus-doped channel, due to the formation of impurity Hubbard bands. While in the lightly doped devices, one-dimensional quantum transport is only observed at low temperature. In this sense, phonon-assisted resonant-tunneling is suppressed due to misaligned levels formed in a few isolated quantum dots at cryogenic temperature. We observe the Anderson-Mott transition from isolate electron state to impurity bands as the doping concentration is increased.