Band Structure and Optical Gain of InGaAs/GaAsBi Type-Ⅱ Quantum Wells Modeled by the k·p Model

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2018,（5）
• 页码范围: 133-136
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/35/5/057801

摘要

Optical gains of type-Ⅱ InGaAs/GaAsBi quantum wells (QWs) with W,N,and M shapes are analyzed theoretically for near-infrared laser applications.The bandgap and wave functions are calculated using the self-consistent k · p Hamiltonian,taking into account valence band mixing and the strain effect.Our calculations show that the M-shaped type-Ⅱ QWs are a promising structure for making 1.3μm lasers at room temperature because they can easily be used to obtain 1.3 μm for photoluminescence with a proper thickness and have large wave-function overlap for high optical gain.