Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation

• 来源期刊: 中国物理B（英文版）
• 关键词: partiallydepleted silicon-on-insulator (PD SOI) totalionizingdose (TID) radiationinduced narrow channel effect (RINCE) drain induced barrier lowering (DIBL) effect
• 年，卷（期）: 2018,（2）
• 页码范围: 619-624
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/27/2/028501

摘要

Total ionizing dose responses of different transistor geometries after being irradiated by 60Co γ-rays,in 0.13-μm partially-depleted silicon-on-insulator (PD SOI) technology are investigated.The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor (nMOSFET) is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide,which is called the radiation-induced narrow channel effect (RINCE).The analysis based on a charge sharing model and three-dimensional technology computer aided design (TCAD) simulations demonstrate that phenomenon.The radiation-induced leakage currents under different drain biases are also discussed in detail.