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摘要:
Thermoelectric selenides have attracted more and more attentions recently. Herein, p-type SnSe polycrystalline bulk materials with good thermoelectric properties are presented. By using the SnSe2 nanostructures synthesized via a wet-chemistry route as the precursor, polycrystalline SnSe bulk materials were successfully obtained by a combined heat-treating process under reducing atmosphere and following spark plasma sintering procedure. As a reference, the SnSe nanostructures synthesized via a wet-chemistry route were also fabricated into polycrystalline bulk materials through the same process. The thermoelectric properties of the SnSe polycrystalline transformed from SnSe2 nanostructures indicate that the increasing of heattreating temperature could effectively decrease the electrical resistivity, whereas the decrease in Seebeck coefficient is nearly invisible. As a result, the maximum power factor is enhanced from 5.06 × 10?4 W/m·K2 to 8.08 × 10?4 W/m·K2 at 612 ?C. On the other hand, the reference sample, which was obtained by using SnSe nanos-tructures as the precursor, displays very poor power factor of only 1.30 × 10?4 W/m·K2 at 537 ?C. The x-ray diffraction (XRD), scanning electron microscope (SEM), x-ray fluorescence (XRF), and Hall effect characterizations suggest that the anisotropic crystal growth and existing Sn vacancy might be responsible for the enhanced electrical transport in the poly-crystalline SnSe prepared by using SnSe2 precursor. On the other hand, the impact of heat-treating temperature on thermal conductivity is not obvious. Owing to the boosting of power factor, a high zT value of 1.07 at 612 ?C is achieved. This study provides a new method to synthesize polycrystalline SnSe and pave a way to improve the thermoelectric properties of polycrystalline bulk materials with similar layered structure.
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篇名 Enhanced thermoelectric properties of p-type polycrystalline SnSe by regulating the anisotropic crystal growth and Sn vacancy
来源期刊 中国物理B(英文版) 学科
关键词 thermoelectric properties SnSe2 nanostructures polycrystalline SnSe anisotropic crystal growth
年,卷(期) 2018,(4) 所属期刊栏目
研究方向 页码范围 103-109
页数 7页 分类号
字数 语种 英文
DOI 10.1088/1674-1056/27/4/047211
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thermoelectric properties
SnSe2 nanostructures
polycrystalline SnSe
anisotropic crystal growth
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中国物理B(英文版)
月刊
1674-1056
11-5639/O4
北京市中关村中国科学院物理研究所内
eng
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17050
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