Electronic structures of impurities and point defects in semiconductors

• 来源期刊: 中国物理B（英文版）
• 关键词: semiconductor shallow impurity deep impurity bound exciton density-functional theory effective-mass theory hydrogen model
• 年，卷（期）: 2018,（11）
• 页码范围: 358-371
• 页数: 14页
• 语种: 英文
• DOI: 10.1088/1674-1056/27/11/117103

摘要

A brief history of the impurity theories in semiconductors is provided.A bound exciton model is proposed for both donor-and acceptor-like impurities and point defects,which offers a unified understanding for "shallow" and "deep"impurities and point defects.The underlying physics of computational results using different density-functional theorybased approaches are discussed and interpreted in the framework of the bound exciton model.