Theoretical study on the kesterite solar cells based on Cu2ZnSn(S,Se)4 and related photovoltaic semiconductors

• 来源期刊: 中国物理B（英文版）
• 关键词: kesterite thin film solar cells Cu2ZnSnS4 and Cu2ZnSnSe4 first-principles calculations defects and dopants
• 年，卷（期）: 2018,（1）
• 页码范围: 37-48
• 页数: 12页
• 语种: 英文
• DOI: 10.1088/1674-1056/27/1/018806

摘要

The kesterite thin film solar cells based on the quaternary Cu2ZnSnS4 and Cu2ZnSnSe4 and their alloys Cu2ZnSn(S,Se)4 have been considered as environment-friendly and non-toxic alternatives to the currently commercialized CdTe and Cu(In,Ga)Se2 thin film solar cells. From the theoretical point of view, we will review how the group I2–II–IV–VI4 quaternary compound semiconductors are derived from the binary CdTe and the ternary CuInSe2 or CuGaSe2 through the cation mutation, and how the crystal structure and electronic band structure evolve as the component elements change. The increased structural and chemical freedom in these quaternary semiconductors opens up new possibility for the tailoring of material properties and design of new light-absorber semiconductors. However, the increased freedom also makes the development of high-efficiency solar cells more challenging because much more intrinsic point defects, secondary phases, surfaces, and grain-boundaries can exist in the thin films and influence the photovoltaic performance in a way different from that in the conventional CdTe and Cu(In,Ga)Se2 solar cells. The experimental characterization of the properties of defects, secondary phase, and grain-boundaries is currently not very efficient and direct, especially for these quaternary compounds. First-principles calculations have been successfully used in the past decade for studying these properties. Here we will review the theoretical progress in the study of the mixed-cation and mixed-anion alloys of the group I2–II–IV–VI4 semiconductors, defects, alkaline dopants, and grain boundaries, which provided very important information for the optimization of the kesterite solar cell performance.