Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation

• 来源期刊: 中国物理B（英文版）
• 关键词: bipolar junction transistors radiation effects surface damage bulk damage
• 年，卷（期）: 2018,（1）
• 页码范围: 435-442
• 页数: 8页
• 语种: 英文
• DOI: 10.1088/1674-1056/27/1/016103

摘要

Two complementary types NPN and PNP of bipolar junction transistors (BJTs) were exposed to high dose of neutrons and gamma rays. The change in the base and collector currents, minority carriers lifetime, and current gain factorβ with respect to the dose were analyzed. The contributions of the base current according to the defect types were also reported. It was declared that the radiation effect of neutrons was almost similar between the two transistor types, this effect at high dose may decrease the value ofβ to less than one. The Messenger–Spratt equation was used to describe the experimental results in this case. However, the experimental data demonstrated that the effect of gamma rays was generally higher on NPN than PNP transistors. This is mainly attributed to the difference in the behavior of the trapped positive charges in the SiO2 layers. Meanwhile, this difference tends to be small for high gamma dose.