Metal-to-insulator transition in two-dimensional ferromagnetic monolayer induced by substrate

• 来源期刊: 中国物理B（英文版）
• 关键词: metal-to-insulator transition two-dimensional monolayer ferromagnetic material
• 年，卷（期）: 2018,（7）
• 页码范围: 534-539
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/27/7/077106

摘要

Two-dimensional (2D) ferromagnetic (FM) materials have great potential for applications in next-generation spin-tronic devices. Since most 2D FM materials come from van der Waals crystals, stabilizing them on a certain substrate without killing the ferromagnetism is still a challenge. Through systematic first-principles calculations, we proposed a new family of 2D FM materials which combines TaX (X=S, Se or Te) monolayer and Al2O3(0001) substrate. The TaX monolayers provide magnetic states and the Al2O3(0001) substrate stabilizes the former. Interestingly, the Al2O3(0001) substrate leads to a metal-to-insulator transition in the TaX monolayers and induces a band gap up to 303 meV. Our study paves the way to explore promising 2D FM materials for practical applications in spintronics devices.