Superconductivity of bilayer titanium/indium thin film grown on SiO2/Si (001)

• 来源期刊: 中国物理B（英文版）
• 关键词: titanium/indium thin film molecular beam epitaxy (MBE) proximity effect
• 年，卷（期）: 2018,（6）
• 页码范围: 427-431
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/27/6/067403

摘要

Bilayer superconducting films with tunable transition temperature (Tc) are a critical ingredient to the fabrication of high-performance transition edge sensors.Commonly chosen materials include Mo/Au,Mo/Cu,Ti/Au,and Ti/A1 systems.Here in this work,titanium/indium (Ti/In) bilayer superconducting films are successfully fabricated on SiO2/Si (001)substrates by molecular beam epitaxy (MBE).The success in the epitaxial growth of indium on titanium is achieved by lowering the substrate temperature to-150 ℃ during indium evaporation.We measure the critical temperature under a bias current of 10 μA,and obtain different superconducting transition temperatures ranging from 645 mK to 2.7 K by adjusting the thickness ratio of Ti/In.Our results demonstrate that the transition temperature decreases as the thickness ratio of Ti/In increases.